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Liang Pang. Intrinsic Limits of Electron Mobility in Modulation-Doped AlGaN/GaN 2D Electron Gas by Phonon Scattering[J]. Journal of Electronic Science and Technology, 2014, 12(4): 415-418. DOI: 10.3969/j.issn.1674-862X.2014.04.014
Citation: Liang Pang. Intrinsic Limits of Electron Mobility in Modulation-Doped AlGaN/GaN 2D Electron Gas by Phonon Scattering[J]. Journal of Electronic Science and Technology, 2014, 12(4): 415-418. DOI: 10.3969/j.issn.1674-862X.2014.04.014
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Intrinsic Limits of Electron Mobility in Modulation-Doped AlGaN/GaN 2D Electron Gas by Phonon Scattering

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