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Sukla Basu. Analytical Modeling of Base Transit Time of SiGe HBTS Including Concentration Dependent Bandgap Narrowing Effect[J]. Journal of Electronic Science and Technology, 2010, 8(2): 140-143. DOI: 10.3969/j.issn.1674-862X.2010.02.009
Citation: Sukla Basu. Analytical Modeling of Base Transit Time of SiGe HBTS Including Concentration Dependent Bandgap Narrowing Effect[J]. Journal of Electronic Science and Technology, 2010, 8(2): 140-143. DOI: 10.3969/j.issn.1674-862X.2010.02.009
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Analytical Modeling of Base Transit Time of SiGe HBTS Including Concentration Dependent Bandgap Narrowing Effect

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