Low working loss Si/4H-SiC heterojunction MOSFET with analysis of the gate-controlled tunneling effect

Chen Hang; Zhang You-Run

doi:10.1016/j.jnlest.2023.100224

Chen Hang, Zhang You-Run. Low working loss Si/4H-SiC heterojunction MOSFET with analysis of the gate-controlled tunneling effect[J]. Journal of Electronic Science and Technology, 2023, 21(4): 100224. DOI: 10.1016/j.jnlest.2023.100224

Citation:

Chen Hang, Zhang You-Run. Low working loss Si/4H-SiC heterojunction MOSFET with analysis of the gate-controlled tunneling effect[J]. Journal of Electronic Science and Technology, 2023, 21(4): 100224. DOI: 10.1016/j.jnlest.2023.100224

Citation:

Chen Hang, Zhang You-Run. Low working loss Si/4H-SiC heterojunction MOSFET with analysis of the gate-controlled tunneling effect[J]. Journal of Electronic Science and Technology, 2023, 21(4): 100224. DOI: 10.1016/j.jnlest.2023.100224

Low working loss Si/4H-SiC heterojunction MOSFET with analysis of the gate-controlled tunneling effect

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