advanced
Ting Zhang, Shu-Ren Zhang, Meng-Qiang Wu, Wei-Jun Sang, Zheng-Ping Gao, Zhong-Ping Li. Studies on Dielectric Properties of Silicon Nitride at High Temperature[J]. Journal of Electronic Science and Technology, 2007, 5(4): 316-319.
Citation: Ting Zhang, Shu-Ren Zhang, Meng-Qiang Wu, Wei-Jun Sang, Zheng-Ping Gao, Zhong-Ping Li. Studies on Dielectric Properties of Silicon Nitride at High Temperature[J]. Journal of Electronic Science and Technology, 2007, 5(4): 316-319.
shu

Studies on Dielectric Properties of Silicon Nitride at High Temperature

  • 1.

    State Key Laboratory of Electronic Thin Film and Integrated Devices,University of Electronic Science and Technology of China (UESTC),Chengdu,610054,China;

  • 2.

    Beijing Aerospace Research Institutes of Materials and Processing Technology,Beijing,China

More Information
  • Author Bio:

    Ting Zhang research interests include dielectric material, flyrain68@126.com

  • Received Date: 2007-08-14
  • Rev Recd Date: 2007-09-09
  • Publish Date: 2007-12-24
    Abstract
  • In this paper, the dielectric properties of silicon nitride are studied using the dielectric polarization theories. According to the developed dielectric models, the temperature dependence of dielectric constant and loss of silicon nitride is mainly analyzed. In addition, the impact of Li+, K+, Ca2+, Al3+ and Mg2+ doping on the dielectric properties of silicon nitride are also estimated.
    • FullText(HTML)
    • References(0)
    • Relative Articles
  • Supplements (0)

    • Catalog

      Get Citation
      PDF
      XML

      Article Metrics

      Article views (445) PDF downloads (55) Cited by()
      Related
      Proportional views

      Copyright 2008-2016 JEST All Rights Reserved

      Supported by: Beijing Renhe Information Technology Co. Ltd 

      /

      DownLoad:  Full-Size Img  PowerPoint
      Return
      Return