High Power, Room Temperature Terahertz Emitters Based on Dopant Transitions in 6H-Silicon Carbide

James Kolodzey; Guang-Chi Xuan; Peng-Cheng Lv; Nathan Sustersic; Xin Ma

doi:10.3969/j.issn.1674-862X.2014.03.002

James Kolodzey, Guang-Chi Xuan, Peng-Cheng Lv, Nathan Sustersic, Xin Ma. High Power, Room Temperature Terahertz Emitters Based on Dopant Transitions in 6H-Silicon Carbide[J]. Journal of Electronic Science and Technology, 2014, 12(3): 250-254. DOI: 10.3969/j.issn.1674-862X.2014.03.002

Citation:

James Kolodzey, Guang-Chi Xuan, Peng-Cheng Lv, Nathan Sustersic, Xin Ma. High Power, Room Temperature Terahertz Emitters Based on Dopant Transitions in 6H-Silicon Carbide[J]. Journal of Electronic Science and Technology, 2014, 12(3): 250-254. DOI: 10.3969/j.issn.1674-862X.2014.03.002

Citation:

James Kolodzey, Guang-Chi Xuan, Peng-Cheng Lv, Nathan Sustersic, Xin Ma. High Power, Room Temperature Terahertz Emitters Based on Dopant Transitions in 6H-Silicon Carbide[J]. Journal of Electronic Science and Technology, 2014, 12(3): 250-254. DOI: 10.3969/j.issn.1674-862X.2014.03.002

High Power, Room Temperature Terahertz Emitters Based on Dopant Transitions in 6H-Silicon Carbide

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